392.Aslan, Barbaros; Eastman, Lester F.,A THz-range Planar NDR Device Utilizing Ballistic Electron Acceleration In GaN. Solid-St.pdf
392A THz-range planar.pdf
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A planar GaN diode structure is investigated as a potential THz-range NDR diode, with simulations showing a peak electron velocity of 7×10^7 cm/s, and...
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- File Format: PDF
- File Size: 46 KB
- Pages: 1
- Language: EN
- Author: YP
- Total Downloads: 50
- Last Updated: 2 months ago
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