8.3.2023 Paper 2023 Lundh CS Mantech Extended Abstract V6.pdf

8.3.2023-Paper-2023-Lundh-CS-Mantech-extended-abstract-v6.pdf
Preview of 8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6
🔗 Source: csmantech.org
📊 Size: 582 KB
👤 Author: MA043969
⬇️ Downloads: 83

Summary

Gallium nitride high electron mobility transistors (HEMTs) were micro-transfer printed onto Si, SiC, and diamond substrates. The transfer-printed GaN HEMTs on these substrates had thermal resistances of 10.6, 6.7, and 4.0 mm∙K/W, respectively. The GaN-on-diamond HEMT demonstrated a 62% reduction in thermal resistance compared to the GaN-on-Si HEMT. Raman spectroscopy showed reduced tensile stress in the transfer-printed GaN films, indicating a shift towards a stress-free state. Thermoreflectance thermal imaging revealed the effectiveness of heterogeneous integration with the diamond substrate on device electrothermal performance.

Description

Gallium nitride high electron mobility transistors (HEMTs) were micro-transfer printed onto Si, SiC, and diamond substrates.

Technical Information

  • File Format: PDF
  • File Size: 582 KB
  • Pages: 3
  • Language: EN
  • Author: MA043969
  • Total Downloads: 83
  • Last Updated: 4 weeks ago

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