APT200GN60J_B_MIS.pd F.pdf

The APT200GN60J is an IGBT (Insulated Gate Bipolar Transistor) with a 600V collector-emitter voltage rating and a 200A continuous collector current at 25°C. It features ultra-low VCE(ON) and is suitable for low-frequency applications requiring minimal conduction loss. The device has a built-in gate resistor, ensuring reliable operation even in short-circuit fault conditions. Key specifications include:

Collector-Emitter Breakdown Voltage: 600V
Gate Threshold Voltage: 5-6.5V
Collector-Emitter On Voltage: 1.05-1.85V at 200A and 25°C
Collector Cut-off Current: 2µA at 25°C
Gate-Emitter Leakage Current: 1nA
Integrated Gate Resistor: 9.8-14.5Ω
Total Power Dissipation: 682W
Operating and Storage Junction Temperature Range: -55 to 175°C

The device is suitable for applications such as welding, inductive heating, solar inverters, motor drives, and UPS. It has a short-circuit capability of 5µs and is rated for 175°C operation. The IGBT has a low gate charge, simplifying gate drive design and minimizing losses.