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PBSS9410PA.pdf

🔗 Source: assets.nexperia.com

📊 Size: 167 KB

👤 Author: NXP Semiconductors

⬇️ Downloads: 82

Summary

The PBSS9410PA is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor with a collector-emitter voltage of 100V and a collector current of 2.7A. It features low collector-emitter saturation voltage, high collector current capability, and a small required Printed-Circuit Board (PCB) area. The transistor is encapsulated in an ultra-thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. Its applications include load switching, battery-driven devices, power management, charging circuits, and power switches. The device has a junction temperature of 150°C and an ambient temperature range of -55°C to 150°C. The thermal resistance from junction to ambient is 250 K/W in free air, and the total power dissipation is 500 mW at an ambient temperature of 25°C.

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Description

The PBSS9410PA is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor with a collector-emitter voltage of 100V and a collector current of 2.7A.

Technical Information

File Format: PDF
File Size: 167 KB
Pages: 15
Language: EN
Author: NXP Semiconductors
Total Downloads: 82
Last Updated: 1 month ago

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