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IB1011S70.pdf

IB1011S70-REV-NC-DS-REV-A.pdf
Preview of IB1011S70
🔗 Source: abditus.pl
📊 Size: 89 KB
👤 Author: fyepez
⬇️ Downloads: 96

Summary

The IB1011S70 is a high-power pulsed avionics transistor designed for L-Band radar systems, operating between 1030 and 1090MHz. It supplies a minimum of 70 watts of peak pulse power in class C mode, with 8W input power, 10µs pulse width, and 1% duty cycle. The device features ultra-high fT, high efficiency, common base configuration, single power supply, gold metal, emitter ballasting, internal impedance matching, and ultra-low loss design. All devices are 100% screened for large signal RF parameters. Maximum ratings include a collector-emitter voltage of 65V, emitter-base voltage of 2V, storage temperature range of -65 to +150°C, and operating junction temperature range of up to +200°C. The device has a thermal resistance of 0.26°C/W and is designed for high reliability and ease of use.

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Description

The IB1011S70 is a high-power pulsed avionics transistor designed for L-Band radar systems, operating between 1030 and 1090MHz.

Technical Information

  • File Format: PDF
  • File Size: 89 KB
  • Pages: 7
  • Language: EN
  • Author: fyepez
  • Total Downloads: 96
  • Last Updated: 1 month ago

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This PDF document about IB1011S70 provides comprehensive information and guidance. Whether you're a beginner or advanced user, this resource offers valuable insights into IB1011S70.

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