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Encapsulation In Reference

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Preview of MoS2-FET Hysteresis
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MoS2-FET Hysteresis (825162.pdf)

1.94 MBPiacentini, AgataEN 2 pages
Researchers created MoS2 field-effect transistors (FETs) with low hysteresis by encapsulating them in CVD-grown hexagonal boron nitride (h-BN) layers,
Preview of GS34P02Q03-01E
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GS34P02Q03-01E (GS34P02Q03-01E.pdf)

442 KBYokogawa Electric CorporationEN 7 pages
Key terms include FCN-500 for NFCP501/502-based controllers, FCN-100 for NFCP100, FCN-RTU for NFCP050, and FCJ for all-in-one controllers

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hysteresis controllers researchers created field effect transistors encapsulating grown hexagonal boron nitride layers gs34p02q03 terms include nfcp501 based nfcp100 nfcp050 offers scalable capabilities reliable system design

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