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Insulated Gate Bipolar Transistor Operation

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Preview of APT200GN60J_B_MIS.pdf
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APT200GN60J_B_MIS.pdf (APT200GN60J_B_MIS.pdf)

474 KBDarel BidwellEN 6 pages
The APT200GN60J is an IGBT (Insulated Gate Bipolar Transistor) with a 600V collector-emitter voltage rating and a 200A continuous collector current at 25°C
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Preview of TIM1200DDM17-TSA_DY.pdf
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TIM1200DDM17-TSA_DY.pdf (TIM1200DDM17-TSA_DY.pdf)

372 KBmartin_lrEN 8 pages
The TIM1200DDM17-TSA000 is a dual switch 1700V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module with a wide reverse bias safe
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