PDF Ebook about: Power Transistors
Power Transistors
List of ebooks and manuals about Power Transistors
50 documents available in our comprehensive collection of Power Transistors resources. Find practical guides, tutorials, and documentation to enhance your knowledge.
ILD2731M60 (ILD2731M60.pdf)
126 KBEN 4 pages
The ILD2731M60 is an S-Band Radar Transistor with a peak power output of 60W at 300us/20%/32V and an average power of 12W
IB2856S30 (IB2856S30-REV-NC-DS-REV-NC.pdf)
90 KBEN 7 pages
The IB2856S30 is a high-power pulsed transistor designed for class C operation, supplying a minimum of 30 watts of peak pulse power
Data Sheet (2309905.pdf)
165 KBEN 8 pages
The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package, intended for use in medium power linear and switching
Download datasheet (PHPT61010NY.pdf)
715 KBEN 16 pages
The PHPT61010NY is a 100 V, 10 A NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package
ILD1011M15 (ILD1011M15.pdf)
111 KBEN 8 pages
The ILD1011M15 is a high-power transistor designed for Avionics systems operating at 1030-1090 MHz, supplying a minimum of 15 watts of peak pulse power under
Download datasheet (MJD2873-Q.pdf)
219 KBEN 10 pages
The MJD2873-Q is a 50 V, 2 A NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package, featuring high
GaN Amplifiers (rudolph.pdf)
33 KBEN 1 page
GaN high electron-mobility transistors are excellent for high-power broadband applications and can also benefit low-noise amplifiers, with reported third-order
IB1011S70 (IB1011S70-REV-NC-DS-REV-A.pdf)
89 KBEN 7 pages
The IB1011S70 is a high-power pulsed avionics transistor designed for L-Band radar systems, operating between 1030 and 1090MHz
Download datasheet (mjd31ct4-a.pdf)
578 KBEN 13 pages
The MJD31CT4-A is an automotive-grade low voltage NPN power transistor with a DPAK package, featuring high gain performance and low saturation voltage
Download datasheet (BC51PA-Q_SER.pdf)
244 KBEN 13 pages
The BC51PA-Q series are 45 V, 1 A PNP medium power transistors in an ultra-thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package, featuring
IB1011M10 (IB1011M10.pdf)
136 KBEN 8 pages
The IB1011M10 is a high-power pulsed avionics transistor designed for L-Band avionics systems operating at 1030 and 1090 MHz, supplying a minimum of 10 watts
IPW60R090CFD7XKSA1 Bảng dữliệu (2643899.pdf)
1.34 MBEN 14 pages
The IPW60R090CFD7 is a 600V CoolMOS CFD7 power transistor with ultra-fast body diode, low gate charge, and best-in-class reverse recovery charge
下载数据手册 (BC53PA_SER.pdf)
246 KBEN 13 pages
The BC53PA series are 80 V, 1 A PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package, featuring
Download datasheet (PBSS4041NZ-Q.pdf)
366 KBEN 15 pages
The PBSS4041NZ-Q is a 60 V, 7 A NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package
Designing 64-bit SRAM (5733.pdf)
547 KBEN 4 pages
present a static access memory (SRAM) design for low-power computer applications
Download datasheet (2PA1774M_SERIES.pdf)
225 KBEN 9 pages
Nexperia replaced NXP as the company name, with the website changing to http://www.nexperia.com and email to [email protected], and the copyright...
Download datasheet (BSR19A.pdf)
205 KBEN 8 pages
The BSR19A is an NPN high-voltage transistor in a SOT23 package, with a PNP complement of BSR20A. It features low current (max. 300 mA) and high voltage (max.
Download datasheet (PBSS301NX.pdf)
272 KBEN 12 pages
The PBSS301NX is a 12 V, 5.3 A NPN low VCEsat (BISS) transistor in a SOT89 package, featuring low collector-emitter saturation voltage, high collector current...
Self-Contained Photoelectric Systems: Technical Specifications and Features (Overview_SM7000_en.pdf)
123 KBEN 5 pages
They are designed for harsh environments, with power and output indicators, and support both NPN/PNP and ambivalent PNP/PNP transistor outputs
Download datasheet (PMBTA44-Q.pdf)
238 KBEN 10 pages
The PMBTA44-Q is a 400 V, 0.3 A NPN high-voltage low VCEsat transistor in a SOT23 package, featuring low current, high voltage, and qualified according to...
Download datasheet (PBSS9410PA.pdf)
167 KBEN 15 pages
The PBSS9410PA is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor with a collector-emitter voltage of 100V and a collector current of 2.7A.
Download datasheet (PMBT3904QA.pdf)
233 KBEN 13 pages
The PMBT3904QA is a 40 V, 200 mA NPN switching transistor in an ultra small DFN1010D-3 leadless SMD plastic package.
MPA 41: 4-Channel Multiplexed Photoelectric Amplifier (Overview_MPA41_en-1.pdf)
101 KBEN 3 pages
The MPA 41 is a 4-channel photoelectric amplifier for use with remote transmitters and receivers. It operates independently on each channel, preventing optical cross-talk. It offers a choice of 4 individual relays or 4 individual transistor outputs.
Download datasheet (BC817K_SER.pdf)
344 KBEN 24 pages
The BC817K series are 45 V, 500 mA NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, featuring three
Download datasheet (2PC4081R.pdf)
202 KBEN 7 pages
2PC4081R is an NPN general-purpose transistor in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, with a PNP complement of 2PA1576R.
Descargar (CM50DY-12H.pdf)
57 KBEN 4 pages
The CM50DY-12H is a Dual IGBTMOD H-Series Module with 50 Amperes/600 Volts rating, designed for switching applications, featuring low drive power, low
Download datasheet (BC817QC-Q_SER.pdf)
329 KBEN 14 pages
The BC817QC-Q series are 45 V, 500 mA NPN general-purpose transistors in an ultra small DFN1412D-3 leadless Surface-Mounted Device (SMD) plastic package
Download datasheet (PBSS5330PAS.pdf)
729 KBEN 18 pages
The PBSS5330PAS is a 30 V, 3 A PNP low VCEsat (BISS) transistor in an ultra-thin DFN2020D-3 leadless SMD package, featuring low collector-emitter saturation...
Download datasheet (PBHV8540X-Q.pdf)
264 KBEN 13 pages
The PBHV8540X-Q is a 500 V, 0.5 A NPN high-voltage low VCEsat transistor in a SOT89 package, featuring high voltage, low collector-emitter saturation voltage,...
Data sheet (l99h92.pdf)
4.04 MBEN 77 pages
The L99H92 is a half-bridge pre-driver for automotive applications, designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual
MoS2-FET Hysteresis (825162.pdf)
1.94 MBEN 2 pages
Researchers created MoS2 field-effect transistors (FETs) with low hysteresis by encapsulating them in CVD-grown hexagonal boron nitride (h-BN) layers,
Nexperia Transistor Update (PBSS4032NT.pdf)
297 KBEN 15 pages
Nexperia replaced NXP as the company name, with the website changing to http://www.nexperia.com and email to [email protected], and the copyright...
Income Volatility (dp12823.pdf)
380 KBEN 31 pages
Income volatility is associated with worse health and well-being, with a one unit increase in the standard deviation of permanent income volatility linked to a...
headphone sockets (iFi-audio-Tech-Note-Pro-iDSD-The-Front.pdf)
420 KBEN 6 pages
The Pro iDSD is a DAC that converts digital signals to analog and passes them to devices like pre-amplifiers, power amplifiers, or headphones
Nexperia Notice (LSYMTRA.pdf)
129 KBEN 4 pages
Nexperia replaced NXP as the company name, and all references to NXP or Philips Semiconductors should be updated to Nexperia, including website and email...
K. Berstein et al. - Device and Architecture Outlook for Beyond-CMOS Switches.pdf (K. Berstein et al. - Device and Architecture Outlook for Beyond-CMOS Switches.pdf)
2.9 MBEN 16 pages
Complementary metal–oxide–semiconductor (CMOS) scaling is destined to conclude due to fundamental limitations, prompting research into new devices as...
IGN2731M50 (IGN2731M50.pdf)
105 KBEN 6 pages
The IGN2731M50 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-Band radar applications, operating over the 2.7-3.1 GHz...
Download datasheet (BCW68X_SER.pdf)
266 KBEN 13 pages
The BCW68 series is a 45 V, 800 mA PNP general-purpose transistor in a small SOT23 package, with high current, AEC-Q101 qualified, and suitable for...
Digital TV Transmitter (200-500W) - FNJ-DTR Series by Fanamoj (FNJ-DTR-200-500-1.pdf)
521 KBEN 6 pages
The FNJ-DTR series from Fanamoj are digital TV transmitters with powers ranging from 200 to 500W, adhering to DVB-T/T2 standards and covering UHF/VHF bands
Read the complete test of the Commission’s press release regarding its 2017 enforcement efforts against pirate radio activities. (DOC-350171A1.pdf)
158 KBEN 2 pages
FCC Chairman Ajit Pai announced significant progress in combating unlawful broadcasting, or "pirate radio," with 306 investigations, 210 notices of unlicensed...
electric1 (electric1.pdf)
688 KBEN 37 pages
Computer engineering integrates circuits and systems onto small silicon pieces, with specialists in areas like silicon devices, CMOS circuits, and system...
Download datasheet (PBSS304NX.pdf)
300 KBEN 13 pages
The PBSS304NX is a 60 V, 4.7 A NPN low VCEsat transistor in a SOT89 package, featuring low collector-emitter saturation voltage, high collector current...
telco-pab-usermanual-en (telco-pab-usermanual-en.pdf)
568 KBEN 3 pages
The Photoelectric Amplifier Bus Series (PAB) is a multiplexed photoelectric amplifier with a supply voltage of 10-30 V dc / 24V ac and power consumption of
Data Sheet (3775301.pdf)
570 KBEN 5 pages
MOSFET Single, P-Ch, features low on-resistance, high-speed switching, simple drive circuits, easy parallel use, and ESD protected gate up to 2KV HBM, with...
User Manuel PA12AB en (User_Manuel_PA12AB_en.pdf)
70 KBEN 1 page
PA 12 A/B is a 1-channel manual photoelectric amplifier with 4 selectable transmitter frequencies, suitable for various applications.
SGC 11 Controller (Overview_SGC11_en.pdf)
93 KBEN 3 pages
The SGC 11 remote light curtain system features a 0-5m sensing range, 230V ac, 115V ac, or 24V ac supply voltage, manual and automatic sensitivity adjustment,...
ULN200x and ULQ200x: High-Voltage, High-Current Darlington Transistor Arrays for Diverse Applications (uln2003ai.pdf)
1.73 MBEN 41 pages
ULN200x and ULQ200x arrays offer high-voltage (50V), high-current (500mA) performance, ideal for relay drivers, motor controls, lamp driving, displays, line drivers, and logic buffering.
APT200GN60J_B_MIS.pdf (APT200GN60J_B_MIS.pdf)
474 KBEN 6 pages
The APT200GN60J is an IGBT (Insulated Gate Bipolar Transistor) with a 600V collector-emitter voltage rating and a 200A continuous collector current at 25°C.
Circularity Guide (Citizen-led-Co-production.pdf)
150 KBEN 3 pages
Circular transition requires collaborative efforts between stakeholders to narrow, slow down, and close resource loops, reframing roles and considering new...
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