PDF Ebook about: Transistor Devices
Transistor Devices
List of ebooks and manuals about Transistor Devices
50 documents available in our comprehensive collection of Transistor Devices resources. Find practical guides, tutorials, and documentation to enhance your knowledge.
Download datasheet (BF720.pdf)
562 KBEN 7 pages
The BF720 is an NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package, with a PNP complement of BF723
Bipolar Junction Transistor (Bipolar Junction Transistor.pdf)
1.97 MBEN 44 pages
Bipolar Junction Transistors (BJTs) are semiconductor devices used as amplifiers and logic switches, consisting of three terminals: collector (C), base (B),
Download datasheet (PHPT61010NY.pdf)
715 KBEN 16 pages
The PHPT61010NY is a 100 V, 10 A NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package
Download datasheet (PBSS5160U-Q.pdf)
274 KBEN 12 pages
The PBSS5160U-Q is a 60 V, 1 A PNP low VCEsat transistor in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package
Download datasheet (2PC4081R.pdf)
202 KBEN 7 pages
2PC4081R is an NPN general-purpose transistor in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, with a PNP complement of 2PA1576R
Download datasheet (MJD2873-Q.pdf)
219 KBEN 10 pages
The MJD2873-Q is a 50 V, 2 A NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package, featuring high
Download datasheet (PBSS4041NZ-Q.pdf)
366 KBEN 15 pages
The PBSS4041NZ-Q is a 60 V, 7 A NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package
Download datasheet (BCW89.pdf)
200 KBEN 9 pages
The BCW89 is a 60 V, 100 mA PNP general purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package, featuring low current and voltage,
Download datasheet (BC817K_SER.pdf)
344 KBEN 24 pages
The BC817K series are 45 V, 500 mA NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, featuring three
Download datasheet (BC817QC-Q_SER.pdf)
329 KBEN 14 pages
The BC817QC-Q series are 45 V, 500 mA NPN general-purpose transistors in an ultra small DFN1412D-3 leadless Surface-Mounted Device (SMD) plastic package
Download datasheet (BC51PA-Q_SER.pdf)
244 KBEN 13 pages
The BC51PA-Q series are 45 V, 1 A PNP medium power transistors in an ultra-thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package, featuring
下载数据手册 (BC53PA_SER.pdf)
246 KBEN 13 pages
The BC53PA series are 80 V, 1 A PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package, featuring
MOS Device Physics (HO2.pdf)
353 KBEN 33 pages
MOS device physics is reviewed, focusing on aspects relevant to analog circuit designers, with an emphasis on separating first-order from higher-order...
Download datasheet (BSR19A.pdf)
205 KBEN 8 pages
The BSR19A is an NPN high-voltage transistor in a SOT23 package, with a PNP complement of BSR20A
Download datasheet (PBSS9410PA.pdf)
167 KBEN 15 pages
The PBSS9410PA is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor with a collector-emitter voltage of 100V and a collector current of 2
Download datasheet (PMBTA44-Q.pdf)
238 KBEN 10 pages
3 A NPN high-voltage low VCEsat transistor in a SOT23 package, featuring low current, high voltage, and qualified according to
IB2856S30 (IB2856S30-REV-NC-DS-REV-NC.pdf)
90 KBEN 7 pages
The IB2856S30 is a high-power pulsed transistor designed for class C operation, supplying a minimum of 30 watts of peak pulse power
ILD2731M60 (ILD2731M60.pdf)
126 KBEN 4 pages
The ILD2731M60 is an S-Band Radar Transistor with a peak power output of 60W at 300us/20%/32V and an average power of 12W
Download datasheet (PMBT3904QA.pdf)
233 KBEN 13 pages
The PMBT3904QA is a 40 V, 200 mA NPN switching transistor in an ultra small DFN1010D-3 leadless SMD plastic package
Download datasheet (PBSS5330PAS.pdf)
729 KBEN 18 pages
The PBSS5330PAS is a 30 V, 3 A PNP low VCEsat (BISS) transistor in an ultra-thin DFN2020D-3 leadless SMD package, featuring low collector-emitter saturation
IB1011S70 (IB1011S70-REV-NC-DS-REV-A.pdf)
89 KBEN 7 pages
The IB1011S70 is a high-power pulsed avionics transistor designed for L-Band radar systems, operating between 1030 and 1090MHz
2N3903/D (2n3903-d.pdf)
227 KBEN 9 pages
2N3903 and 2N3904 are general-purpose NPN silicon transistors with maximum ratings of 40V collector-emitter voltage, 200mA collector current, and 625mW total
electric1 (electric1.pdf)
688 KBEN 37 pages
Computer engineering integrates circuits and systems onto small silicon pieces, with specialists in areas like silicon devices, CMOS circuits, and system
LED Current Regulator (BCR420UFD-BCR421UFD.pdf)
736 KBEN 13 pages
BCR420UFD and BCR421UFD are linear LED constant current regulators in a U-DFN2020-6 package, integrating transistors, diodes, and resistors to regulate LED
MoS2-FET Hysteresis (825162.pdf)
1.94 MBEN 2 pages
Researchers created MoS2 field-effect transistors (FETs) with low hysteresis by encapsulating them in CVD-grown hexagonal boron nitride (h-BN) layers,
Download datasheet (mjd31ct4-a.pdf)
578 KBEN 13 pages
The MJD31CT4-A is an automotive-grade low voltage NPN power transistor with a DPAK package, featuring high gain performance and low saturation voltage
Nexperia Transistor Update (PBSS4032NT.pdf)
297 KBEN 15 pages
Nexperia replaced NXP as the company name, with the website changing to http://www.nexperia.com and email to [email protected], and the copyright...
ULN200x and ULQ200x: High-Voltage, High-Current Darlington Transistor Arrays for Diverse Applications (uln2003ai.pdf)
1.73 MBEN 41 pages
ULN200x and ULQ200x arrays offer high-voltage (50V), high-current (500mA) performance, ideal for relay drivers, motor controls, lamp driving, displays, line drivers, and logic buffering.
K. Berstein et al. - Device and Architecture Outlook for Beyond-CMOS Switches.pdf (K. Berstein et al. - Device and Architecture Outlook for Beyond-CMOS Switches.pdf)
2.9 MBEN 16 pages
Complementary metal–oxide–semiconductor (CMOS) scaling is destined to conclude due to fundamental limitations, prompting research into new devices as
IGN2731M50 (IGN2731M50.pdf)
105 KBEN 6 pages
The IGN2731M50 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-Band radar applications, operating over the 2
IBM Power Watson (sg248419.pdf)
10.66 MBEN 218 pages
The book "Enhancing the IBM Power Systems Platform with IBM Watson Services" covers IBM Power Systems servers and IBM Watson services, including Watson...
Download datasheet (PBSS4360Z.pdf)
710 KBEN 14 pages
The PBSS4360Z is a 60 V, 3 A NPN low VCEsat (BISS) transistor in a SOT223 package, featuring low collector-emitter saturation voltage, high collector current
APT15GN120B_SDQ1(G)_C_MIS.pdf (APT15GN120B_SDQ1G_C_MIS.pdf)
164 KBEN 9 pages
The APT15GN120BD_SDQ1(G) is an IGBT (Insulated Gate Bipolar Transistor) with a 1200V collector-emitter voltage rating and a 45A continuous collector current at
866_BSc Physics VI Sem.pdf (866_BSc Physics VI Sem.pdf)
50 KBEN 4 pages
KAKATIYA UNIVERSITY - WARANGAL - TELANGANA offers Under Graduate Courses (Under CBCS 2021 – 2022 onwards) for B.Sc. PHYSICS III Year, SEMESTER – VI.
running into atomic limitations (SFI 1.4a.pdf)
1.19 MBEN 4 pages
The global chip industry is preparing for a future beyond Moore's Law, which states that chipmaking technology will improve sufficiently to shrink transistor
Download datasheet (PBSS304NX.pdf)
300 KBEN 13 pages
7 A NPN low VCEsat transistor in a SOT89 package, featuring low collector-emitter saturation voltage, high collector current
GPU Portability (sathre-portability-gpu-accelerated-hpcasia19.pdf)
637 KBEN 8 pages
Accelerator-based supercomputers have grown to 42% performance share on the TOP500, with GPUs being the most common accelerator, but coding for them can be...
Data Sheet (2309905.pdf)
165 KBEN 8 pages
The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package, intended for use in medium power linear and switching
ATSSA Website Link (Application_RWMScholarship.pdf)
10 KBPT 1 page
O site apresenta informações sobre a ATSSA (American Traffic Safety Services Association), incluindo detalhes sobre produtos, serviços e eventos relacionados à...
Howland Current Pump (snoa474a.pdf)
165 KBEN 17 pages
The Howland Current Pump is a high-impedance current source that uses an operational amplifier to produce both positive and negative output currents.
telco-pab-usermanual-en (telco-pab-usermanual-en.pdf)
568 KBEN 3 pages
The Photoelectric Amplifier Bus Series (PAB) is a multiplexed photoelectric amplifier with a supply voltage of 10-30 V dc / 24V ac and power consumption of...
Nexperia Notice (LSYMTRA.pdf)
129 KBEN 4 pages
Nexperia replaced NXP as the company name, and all references to NXP or Philips Semiconductors should be updated to Nexperia, including website and email...
User Manuel PA12AB en (User_Manuel_PA12AB_en.pdf)
70 KBEN 1 page
PA 12 A/B is a 1-channel manual photoelectric amplifier with 4 selectable transmitter frequencies, suitable for various applications.
8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6 (8.3.2023-Paper-2023-Lundh-CS-Mantech-extended-abstract-v6.pdf)
582 KBEN 3 pages
Gallium nitride high electron mobility transistors (HEMTs) were micro-transfer printed onto Si, SiC, and diamond substrates
Data sheet (l99h92.pdf)
4.04 MBEN 77 pages
The L99H92 is a half-bridge pre-driver for automotive applications, designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual
IPW60R090CFD7XKSA1 Bảng dữliệu (2643899.pdf)
1.34 MBEN 14 pages
The IPW60R090CFD7 is a 600V CoolMOS CFD7 power transistor with ultra-fast body diode, low gate charge, and best-in-class reverse recovery charge
ILD1011M15 (ILD1011M15.pdf)
111 KBEN 8 pages
The ILD1011M15 is a high-power transistor designed for Avionics systems operating at 1030-1090 MHz, supplying a minimum of 15 watts of peak pulse power under
APT200GN60J_B_MIS.pdf (APT200GN60J_B_MIS.pdf)
474 KBEN 6 pages
The APT200GN60J is an IGBT (Insulated Gate Bipolar Transistor) with a 600V collector-emitter voltage rating and a 200A continuous collector current at 25°C
headphone sockets (iFi-audio-Tech-Note-Pro-iDSD-The-Front.pdf)
420 KBEN 6 pages
The Pro iDSD is a DAC that converts digital signals to analog and passes them to devices like pre-amplifiers, power amplifiers, or headphones
IB1011M10 (IB1011M10.pdf)
136 KBEN 8 pages
The IB1011M10 is a high-power pulsed avionics transistor designed for L-Band avionics systems operating at 1030 and 1090 MHz, supplying a minimum of 10 watts
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