20V P-Channel MOSFET.pdf

20V P-Channel MOSFET AO3413A has the following characteristics:
VDS = -20V,
VGS = -4.5V,
ID = -15A,
RDS(ON) < 80mΩ,
TJ = 150°C.
It features low on-resistance, low gate charge, and high junction temperature.
The device is suitable for various applications, including power management and switching.
It has a maximum junction-to-ambient thermal resistance of 125°C/W and a maximum junction-to-lead thermal resistance of 63°C/W.
The device is packaged in a SOT-23 package and has a gate-source voltage range of -4.5V to 0V.
It also has a drain-source breakdown voltage of -20V and a gate-body leakage current of ±100nA.
The device's electrical characteristics include a static drain-source on-resistance of 80mΩ, a forward transconductance of 12S, and a diode forward voltage of -0.7V.
The device's switching parameters include a turn-on delay time of 7.2ns, a turn-on rise time of 36ns, and a turn-off delay time of 53ns.
The device's thermal characteristics include a maximum junction temperature of 150°C and a thermal resistance of 125°C/W.
The device is suitable for use in a variety of applications, including DC-DC converters, power management, and switching circuits.