BFT92W: PNP 4GHz Transistor Specs.pdf

PNP 4 GHz wideband transistor BFT92W
High power gain
Gold metallization ensures excellent reliability
SOT323 (S-mini) package
General purpose transistor for wideband applications up to 2 GHz
Silicon PNP transistor in a plastic SOT323 package
Uses the same crystal as the SOT23 version BFT92
Pinning:
1. base
2. emitter
3. collector
Marking code: W1
Quick reference data:
VCBO: -20 V
VCEO: -15 V
IC: -35 mA
Ptot: 300 mW
hFE: 20-50
fT: 4 GHz
GUM: 17 dB
F: 2.5 dB
Tj: 150 °C
Limiting values:
In accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL CHARACTERISTICS:
Note to the “Limiting values” and “Thermal characteristics”
Ts is the temperature at the soldering point of the collector pin
CHARACTERISTICS:
Tj = 25 °C (unless otherwise specified)
VCBO: -20 V
VCEO: -15 V
VEBO: -2 V
IC: -25 mA
Ptot: 300 mW
Tstg: -65 to 150 °C
Tj: 150 °C
Rth j-s: 190 K/W
ICBO: -50 nA
hFE: 20-50
fT: 4 GHz
Cc: 0.65 pF
Ce: 0.75 pF
Cre: 0.5 pF
GUM: 17 dB
F: 2.5 dB
s21: -10 dB
s11: -20 dB
s22: -10 dB
Power derating curve:
Ptot (mW) = 300 - 0.5 * T (°C)
DC current gain as a function of collector current:
hFE = 20-50
Feedback capacitance as a function of collector-base voltage:
Cre = 0.5 pF
Transition frequency as a function of collector current:
fT = 4 GHz
Gain as a function of collector current:
GUM = 17 dB
Gain as a function of frequency:
GUM = 17 dB