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DMN65D8L MOSFET.pdf

DMN65D8L.pdf
Preview of DMN65D8L MOSFET
🔗 Source: diodes.com
📊 Size: 476 KB
👤 Author: Diodes Incorporated
⬇️ Downloads: 126

Summary

DMN65D8L is an N-CHANNEL ENHANCEMENT MODE MOSFET with 60V BVDSS, 3Ω RDS(ON) at VGS = 10V, and 310mA ID at TA = +25°C. It is designed for high-efficiency power-management applications, including DC-DC converters, power-management functions, battery operated systems, and solid-state relays. The device features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and a small surface-mount package. It is ESD protected, totally lead-free, and RoHS compliant. The MOSFET has a maximum drain-source voltage of 60V, maximum gate-source voltage of ±20V, and maximum continuous drain current of 310mA at VGS = 10V. It also has a thermal resistance of 348°C/W and an operating temperature range of -55 to +150°C.

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Description

DMN65D8L is an N-CHANNEL ENHANCEMENT MODE MOSFET with 60V BVDSS, 3Ω RDS(ON) at VGS = 10V, and 310mA ID at TA = +25°C.

Technical Information

  • File Format: PDF
  • File Size: 476 KB
  • Pages: 6
  • Language: EN
  • Author: Diodes Incorporated
  • Total Downloads: 126
  • Last Updated: 1 week ago

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