G3R40MT12D.pdf

G3R40MT12D.pdf
Preview of G3R40MT12D
🔗 Source: genesicsemi.com
📊 Size: 3.03 MB
👤 Author: GeneSiC Semiconductor LLC
⬇️ Downloads: 75

Summary

The G3R40MT12D is a 1200 V, 40 mΩ SiC MOSFET with N-Channel Enhancement Mode, featuring low temperature coefficient of R, lower Q and smaller R, low device capacitances, and a robust body diode with low V and low Q. It has a continuous forward current of 44 A at 100°C and a pulsed drain current of 150 A. The MOSFET is suitable for various applications, including solar inverters, EV/HEV charging, motor drives, and high voltage DC-DC converters. It has a TO-247-3 package and is RoHS and REACH compliant. The device has undergone 100% avalanche testing and has a superior cost-performance index.

Description

The G3R40MT12D is a 1200 V, 40 mΩ SiC MOSFET with N-Channel Enhancement Mode, featuring low temperature coefficient of R, lower Q and smaller R, low device...

Technical Information

  • File Format: PDF
  • File Size: 3.03 MB
  • Pages: 14
  • Language: EN
  • Author: GeneSiC Semiconductor LLC
  • Total Downloads: 75
  • Last Updated: 6 hours ago

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