Http://www.farnell.c Om/datasheets/163981 4.pdf

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Preview of http://www.farnell.c om/datasheets/163981 4.pdf
🔗 Source: farnell.com
📊 Size: 176 KB
👤 Author: Fairchild Semiconductor
⬇️ Downloads: 48

Summary

The HGTG20N60B3D is a 40A, 600V N-Channel IGBT with an anti-parallel hyperfast diode, featuring low conduction loss, short circuit rating, and a typical fall time of 140ns at 150°C. It is ideal for high voltage switching applications at moderate frequencies. The device has a collector to emitter breakdown voltage of 600V, a collector current of 40A at 25°C, and a gate to emitter voltage of ±20V. The thermal resistance is 0.76°C/W for the IGBT and 1.2°C/W for the diode. The device is packaged in a JEDEC style TO-247 package.

Description

The HGTG20N60B3D is a 40A, 600V N-Channel IGBT with an anti-parallel hyperfast diode, featuring low conduction loss, short circuit rating, and a typical fall...

Technical Information

  • File Format: PDF
  • File Size: 176 KB
  • Pages: 7
  • Language: EN
  • Author: Fairchild Semiconductor
  • Total Downloads: 48
  • Last Updated: 1 month ago

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