IB2856S30.pdf

The IB2856S30 is a high-power pulsed transistor designed for class C operation, supplying a minimum of 30 watts of peak pulse power. It features a common base configuration, single power supply, and gold metal for maximum reliability. The device has emitter ballasting for optimum thermal distribution and internal impedance matching for ease of use. It is designed for use in reliable high-power solid-state amplifiers and can be used as a driver device or stand-alone device. The transistor has a frequency range of 2.856 GHz, pulse width of 12 µs, and duty cycle of 3%. It has a collector-emitter breakdown voltage of 70 V, zero-base voltage collector leakage current of 1.5 mA, and DC current gain of 10-150. The device also has input return loss of 10 dB, output power of 30 W, collector efficiency of 42%, and intra-pulse amplitude droop of 0.3 dB.