IGN2731M50.pdf

IGN2731M50.pdf
Preview of IGN2731M50
🔗 Source: abditus.pl
📊 Size: 105 KB
👤 Author: jburger
⬇️ Downloads: 117

Summary

The IGN2731M50 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-Band radar applications, operating over the 2.7-3.1 GHz frequency band. It supplies a minimum of 50 watts of peak output power with 8dB gain under 300us / 10% pulse conditions. The device is specified with Class AB bias and operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit/test fixture. Maximum ratings include a drain-source voltage of 65V, gate-source voltage of -12 to 0.5V, and storage temperature range of -55 to +150°C. RF electrical characteristics include input return loss, output power, drain current, pulse amplitude droop, power gain, and 3:1 load mismatch stability.

Description

The IGN2731M50 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-Band radar applications, operating over the 2.7-3.1 GHz...

Technical Information

  • File Format: PDF
  • File Size: 105 KB
  • Pages: 6
  • Language: EN
  • Author: jburger
  • Total Downloads: 117
  • Last Updated: 6 days ago

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