ILD1011M15.pdf

ILD1011M15.pdf
Preview of ILD1011M15
🔗 Source: abditus.pl
📊 Size: 111 KB
👤 Author: stupou
⬇️ Downloads: 78

Summary

The ILD1011M15 is a high-power transistor designed for Avionics systems operating at 1030-1090 MHz, supplying a minimum of 15 watts of peak pulse power under 50us, 2% pulse format. It features a Silicon LDMOS FET, high power gain, superior thermal stability, and gold metal for maximum reliability. The device has a common source configuration, is gate-biased to IDQ=10mA, and operates in Class AB. It is epoxy sealed and has a BeO-free package. The maximum ratings include a drain-source voltage of 65V, gate-source voltage of -0.5 to 12V, and storage temperature range of -55 to +150°C. The RF electrical characteristics include an input return loss of -18 to -10 dB, drain efficiency of 40 to 80%, power gain of 13 to 20 dB, and output power of 15 to 75W.

Description

The ILD1011M15 is a high-power transistor designed for Avionics systems operating at 1030-1090 MHz, supplying a minimum of 15 watts of peak pulse power under...

Technical Information

  • File Format: PDF
  • File Size: 111 KB
  • Pages: 8
  • Language: EN
  • Author: stupou
  • Total Downloads: 78
  • Last Updated: 1 month ago

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This PDF document about ILD1011M15 provides comprehensive information and guidance. Whether you're a beginner or advanced user, this resource offers valuable insights into ILD1011M15.

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