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IPW60R090CFD7XKSA1 Bảng Dữliệu.pdf

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Preview of IPW60R090CFD7XKSA1 Bảng dữliệu

🔗 Source: farnell.com

📊 Size: 1.34 MB

👤 Author: Infineon Technologies Austria AG

⬇️ Downloads: 128

Summary

The IPW60R090CFD7 is a 600V CoolMOS CFD7 power transistor with ultra-fast body diode, low gate charge, and best-in-class reverse recovery charge. It is optimized for soft switching topologies, such as phase-shift full-bridge (ZVS) and LLC applications, including server, telecom, and EV charging. The device offers high efficiency, reliability, and power density, with a maximum drain current of 25A, maximum drain-source voltage of 650V, and a thermal resistance of 1.0°C/W. It is qualified for industrial applications according to JEDEC47/20/22 tests. Key features include low gate charge, best-in-class reverse recovery charge, improved MOSFET reverse diode dv/dt and diF/dt ruggedness, and high efficiency with outstanding ease-of-use/performance tradeoff.

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Description

The IPW60R090CFD7 is a 600V CoolMOS CFD7 power transistor with ultra-fast body diode, low gate charge, and best-in-class reverse recovery charge.

Technical Information

File Format: PDF
File Size: 1.34 MB
Pages: 14
Language: EN
Author: Infineon Technologies Austria AG
Total Downloads: 128
Last Updated: 1 month ago

Document Overview

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