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J108-J110 FETs.pdf

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Preview of J108-J110 FETs
🔗 Source: javan-electronic.ir
📊 Size: 32 KB
👤 Author: Philips Semiconductors
⬇️ Downloads: 51

Summary

N-channel silicon junction FETs J108, J109, J110 have high speed switching, interchangeable drain and source connections, and low RDSon at zero gate voltage (<8 Ω for J108), suitable for analog switches and choppers. They have a maximum drain-source voltage of ±25V, gate-source cut-off voltage of -3 to -10V (J108), -2 to -6V (J109), and -0.5 to -4V (J110), and a total power dissipation of 400mW.

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Description

N-channel silicon junction FETs J108, J109, J110 have high speed switching, interchangeable drain and source connections, and low RDSon at zero gate voltage...

Technical Information

  • File Format: PDF
  • File Size: 32 KB
  • Pages: 8
  • Language: EN
  • Author: Philips Semiconductors
  • Total Downloads: 51
  • Last Updated: 1 month ago

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This PDF document about J108-J110 FETs provides comprehensive information and guidance. Whether you're a beginner or advanced user, this resource offers valuable insights into J108-J110 FETs.

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