SMBJ-HR TVS Diode.pdf

600W at 10/1000μs waveform
Features:
+ Excellent clamping capability
+ Low incremental surge resistance
+ Typical IR less than 1µA above 12V
+ Surface mount for optimized board space
+ Low profile package
Agency Approvals:
+ IEC 61000-4-2 ESD 15kV(Air), 8kV (Contact)
+ ESD protection of data lines in accordance with IEC 61000-4-2
+ EFT protection of data lines in accordance with IEC 61000-4-4
+ UL Recognized to ANSI/UL 497B
Applications: Protection of I/O Interfaces, VCC bus, and other vulnerable circuits in Telecom, Computer, Industrial, and Consumer electronic applications
Maximum Ratings:
+ Peak Pulse Power Dissipation: 600W
+ Power Dissipation on Infinite Heat Sink: 5.0W
+ Peak Forward Surge Current: 100A
+ Operating Junction and Storage Temperature Range: -65 to 150°C
Electrical Characteristics:
+ Reverse Stand-off Voltage: 5.0 to 170.0V
+ Breakdown Voltage: 6.40 to 189.0V
+ Clamping Voltage: 9.2 to 275.0V
+ Peak Pulse Current: 65.3 to 800A
+ Reverse Leakage Current: 1 to 800µA
Group B Test Requirement:
+ Surge test: 10/1000 µs Peak Pulse Waveform
+ Burn-in (HTRB): 340 hours at 150°C
+ Electrical test: IR@VR, V(BR)@IT
+ 100% Vision Inspection, High Temperature Storage Life, X-RAY inspection, Temperature Cycle Test, Reflow, and Surge Test