[2000] Magnetized Inductively Coupled Plasma Etching Of GaN In Cl2/BCl3 PlasmasJournal Of Vacuum Science And Technology A: Vacuu.pdf

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Preview of [2000] Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmasJournal of Vacuum Science and Technology A: Vacuu
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Summary

Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas was studied. The effects of magnetic confinement on GaN etch characteristics were investigated as a function of Cl2/BCl3. The addition of 10-20% BCl3 to Cl2 increased GaN etch rates. Magnetic confinement increased etch rates and selectivity over photoresist, while slightly reducing selectivity over SiO2. The application of a magnetic field increased positive ion saturation current and species such as Cl, BCl, and Cl2. The addition of 10% Kr to an optimized Cl2/BCl3 condition increased the GaN etch rate by 60%. A more anisotropic GaN etch profile was obtained with the magnetic field, and a vertical profile was obtained with the addition of 10% Kr.

Description

Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas was studied.

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  • File Format: PDF
  • File Size: 387 KB
  • Pages: 6
  • Language: EN
  • Total Downloads: 83
  • Last Updated: 3 weeks ago

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