[2015] Etch Residue Removal Of CoFeB Using CO/NH3 Reactive Ion Beam For Spin Tranfer Torque-magnetic Random Access Meomory Devic.pdf

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Preview of [2015] Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin tranfer torque-magnetic random access meomory devic
🔗 Source: swb.skku.edu
📊 Size: 4.84 MB
📄 Pages: 9 pages
⬇️ Downloads: 54

Summary

Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin transfer torque-magnetic random access memory device. Researchers investigated the removal of sidewall residues on etched nanoscale CoFeB features using a reactive ion beam etching system with CO/NH3 gas mixture, finding that at ion energy of 90-110 eV, effective residue removal occurred without etching the W hard mask.

Description

Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin transfer torque-magnetic random access memory device.

Technical Information

  • File Format: PDF
  • File Size: 4.84 MB
  • Pages: 9
  • Language: EN
  • Total Downloads: 54
  • Last Updated: 2 months ago

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