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MRAM Heating.pdf

5d4P4CriGuGMQzr9Y_us.pdf
Preview of MRAM Heating
🔗 Source: iue.tuwien.ac.at
📊 Size: 315 KB
📄 Pages: 2 pages
⬇️ Downloads: 139

Summary

Elevated temperatures facilitate data writing in spin-transfer torque magnetoresistive random access memories (STT-MRAM). A 3D finite element simulation approach solves the heat transport equation coupled to electron transport and magnetization dynamics in an STT-MRAM cell. The average temperature in the free layer can be obtained from a 1D model, but a 3D model is required to evaluate large local temperature variations. The temperature profile of the free layer is highly inhomogeneous during switching due to inhomogeneous current density distribution. The ratio of the maximum temperature difference to the average temperature is above 30% at the free layer.

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Description

Elevated temperatures facilitate data writing in spin-transfer torque magnetoresistive random access memories (STT-MRAM).

Technical Information

  • File Format: PDF
  • File Size: 315 KB
  • Pages: 2
  • Language: EN
  • Total Downloads: 139
  • Last Updated: 3 weeks ago

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