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Photoluminescence Mapping Of InGaN/GaN Quantum Well Samples And LEDs.pdf

Taylor_2013.pdf
Preview of Photoluminescence mapping of InGaN/GaN quantum well samples and LEDs
🔗 Source: ssd.phys.strath.ac.uk
📊 Size: 514 KB
👤 Author: Strathclyde Standard Desktop
⬇️ Downloads: 104

Summary

Photoluminescence (PL) spectroscopy is used to characterize semiconductors, specifically group III-nitrides, which have high luminescence efficiency but are inhomogeneous. The goal is to perform micro-PL mapping with a near-diffraction limited laser spot size to produce high-resolution PL maps, allowing for the mapping of internal quantum efficiency (IQE) by taking the ratio of peak intensities at room temperature and low temperature. IQE is determined by the equation IQE = IRT/ILT, where IRT is the peak intensity at room temperature and ILT is the peak intensity at low temperature. A custom system design was developed, featuring nanopositioners and a helium closed-cycle cryostat, to allow for PL mapping at both room and low temperature. The system was tested on InGaN/GaN quantum well LED samples grown by two different methods, and progress towards IQE mapping was presented. Limiting factors of the setup were identified, including laser quality, lens, beam expander, and nanopositioners. Future work includes installing a beam expander to achieve a smaller spot size and better resolution, allowing for the study of IQE in samples with varying dislocation densities.

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Description

Photoluminescence (PL) spectroscopy is used to characterize semiconductors, specifically group III-nitrides, which have high luminescence efficiency but are...

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  • File Format: PDF
  • File Size: 514 KB
  • Pages: 1
  • Language: EN
  • Author: Strathclyde Standard Desktop
  • Total Downloads: 104
  • Last Updated: 3 weeks ago

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