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Semiconductor Diamond Technology Quarterly Report Second Quarter 1991.pdf

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Preview of Semiconductor Diamond Technology Quarterly Report Second Quarter 1991
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📊 Size: 2.76 MB
📄 Pages: 55 pages
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Summary

Workers at Research Triangle Institute presented 5 papers to the Electrochemical Society meeting in Washington. These papers represent work in 1) surface chemistry, 2) gas-phase diagnostics, 3) homoepitaxial growth, 4) IGFET fabrication, and 5) halogen-assisted CVD. Of particular interest was the excellent surface chemistry work presented by Dr. Raymond Thomas, expounding the roles of atomic hydrogen on the diamond (100) surface. Atomic hydrogen chemisorbs on the diamond surface at monolayer saturations. Atomic hydrogen does not readily insert on the carbon surface dimer bonds. At dose levels exceeding a monolayer, CH3 and C2H desorptions are detected at temperatures 200°C colder than the H desorption. Preliminary work this quarter showed the capability to produce diamond films from a water-based process which does not involve molecular hydrogen as a process gas. Subsequent quarterly reports will give more details on this process.

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