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537.HAO Y, MAO W, HE H, YANG L; Silicon Carbide Substrate Based Terahertz Gallium Nitride Gunn Diode, Has Nucleation Layer And O.pdf

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Preview of 537.HAO Y, MAO W, HE H, YANG L; Silicon carbide substrate based terahertz gallium nitride Gunn diode, has nucleation layer and o
🔗 Source: thznetwork.org.cn
📊 Size: 11 KB
👤 Author: Yangping
⬇️ Downloads: 103

Summary

Silicon carbide substrate based terahertz gallium nitride Gunn diode has a nucleation layer and an ohmic contact layer on the substrate, with an annular electrode on a vertical device structure, offering high working frequency, eliminating piezoelectric polarization effect, and reducing interface dislocation.

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Description

Silicon carbide substrate based terahertz gallium nitride Gunn diode has a nucleation layer and an ohmic contact layer on the substrate, with an annular...

Technical Information

  • File Format: PDF
  • File Size: 11 KB
  • Pages: 1
  • Language: EN
  • Author: Yangping
  • Total Downloads: 103
  • Last Updated: 3 months ago

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