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APT15GN120B_SDQ1(G)_ C_MIS.pdf

APT15GN120B_SDQ1G_C_MIS.pdf
Preview of APT15GN120B_SDQ1(G)_ C_MIS.pdf
🔗 Source: semic.cz
📊 Size: 164 KB
👤 Author: ylineiro
⬇️ Downloads: 83

Summary

The APT15GN120BD_SDQ1(G) is an IGBT (Insulated Gate Bipolar Transistor) with a 1200V collector-emitter voltage rating and a 45A continuous collector current at 25°C. It features ultra-low VCE(ON) and is suitable for low-frequency applications requiring minimal conduction loss. The device has a slightly positive VCE(ON) temperature coefficient, allowing for easy paralleling. It also has low gate charge, simplifying gate drive design and minimizing losses. Typical applications include welding, inductive heating, solar inverters, SMPS, motor drives, and UPS. The device is RoHS compliant and has a Pb-free terminal finish.

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Description

The APT15GN120BD_SDQ1(G) is an IGBT (Insulated Gate Bipolar Transistor) with a 1200V collector-emitter voltage rating and a 45A continuous collector current at...

Technical Information

  • File Format: PDF
  • File Size: 164 KB
  • Pages: 9
  • Language: EN
  • Author: ylineiro
  • Total Downloads: 83
  • Last Updated: 1 month ago

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