IB1011M10.pdf

The IB1011M10 is a high-power pulsed avionics transistor designed for L-Band avionics systems operating at 1030 and 1090 MHz, supplying a minimum of 10 watts of peak pulse power in class C mode under simple mode S pulse burst conditions at VCC = 50V. It features a low-loss internal input impedance matching structure, gold metallization system, and emitter ballast resistance for maximum reliability and thermal distribution. The device has a common base configuration, single power supply, and ultra-low loss design, with a Be0 package providing unmatched thermal reliability. RF test fixtures are broadband, matched to 50Ω, and have long-term correlation, with 100% device RF screening and no external tuning allowed. Maximum ratings include a collector-emitter voltage of 85V, emitter-base voltage of 2V, and storage temperature range of -55 to +150°C. RF electrical characteristics include an input return loss of 10dB, power gain of 12.22-13.72dB, collector efficiency of 48%, and output power of 10-14.1W.