Spin-on-Glass P-280HP: High-Performance Phosphorus-Doped Glass For Semiconductor Applications.pdf

Data-Sheet-P-280HP-1.pdf
Preview of Spin-on-Glass P-280HP: High-Performance Phosphorus-Doped Glass for Semiconductor Applications
🔗 Source: desertsilicon.com
📊 Size: 210 KB
👤 Author: rr505870
⬇️ Downloads: 63

Summary

Desert Silicon, Inc.'s P-280HP Spin-on-Glass

Location: 941 S. Park Lane, Tempe, AZ 85281

Contact: Phone: 623.872.8659, Email: [email protected], Website: desertsilicon.com

Key Features:
- Dopant Element: Phosphorus (P) with a doping level of 1.9 x 10^22 atoms/cm3 and 70% concentration in the film.
- Viscosity: 1.3 cps
- Thickness: Coats at 2200 Å at 3000 rpm
- Shelf Life: 3 months at 20°C, 9 months at 4°C

Benefits:
- Highest phosphorus doping level available.
- Simplified shipping without the need for POCl3.
- Lower maintenance and ownership costs.
- High purity materials.
- Uniform coatings.
- Lower melting point than pure silica.
- Stable processing independent of flow rates.
- Low parts per billion (PPB) range.

Applications:
- Standard silicate phosphorous-doped glass suitable for semiconductor applications.
- Curing temperatures range from 150°C to 200°C for a low-density solid film, which can become denser up to 650°C or higher.
- Effective at removing sodium and other mobile ions as a getter.

Packaging:
- Available in 8 oz (240ml), 16 oz (500ml), and larger sizes for high-volume applications.

Alternative Products:
- P-240, P-250, P-260, P-640

Additional Dopant Elements:
- Arsenic (As)
- Antimony (Sb)
- Blends of two or more elements for compound semiconductor use.

Disclaimer: While all information is believed to be accurate, users are advised to conduct their own tests to ensure suitability for their applications. No warranty or guarantee is provided, and the company assumes no liability for product use or results obtained. MSDS (Material Safety Data Sheet) should be consulted for health and safety details.

Description

Desert Silicon, Inc. offers Spin-on-Glass P-280HP with key elements Si, O, and P, featuring high phosphorus doping (1.9 x 10^22 atoms/cm3), easy shipping, uniform coatings, and optimal processing for semiconductor applications.

Technical Information

  • File Format: PDF
  • File Size: 210 KB
  • Pages: 2
  • Language: EN
  • Author: rr505870
  • Total Downloads: 63
  • Last Updated: 2 months ago

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