[2023] Selective Isotropic Etching Of SiO2 Over Si3N4 Using NF3/H2 Remote Plasma And Methanol VaporScientific Reports 13 (1), 11.pdf
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Researchers investigated an isotropic etching process for SiO2 selective to Si3N4 using NF3/H2/methanol chemistry.
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- File Format: PDF
- File Size: 6.85 MB
- Pages: 12
- Language: EN
- Author: Hong Seong Gil
- Total Downloads: 57
- Last Updated: 3 weeks ago
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