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MoS2-FET Hysteresis.pdf

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Preview of MoS2-FET Hysteresis
🔗 Source: publications.rwth-aachen.de
📊 Size: 1.94 MB
👤 Author: Piacentini, Agata
⬇️ Downloads: 366

Summary

Researchers created MoS2 field-effect transistors (FETs) with low hysteresis by encapsulating them in CVD-grown hexagonal boron nitride (h-BN) layers, preventing n-doping caused by Al2O3. The h-BN layers improved the electrical performance and stability of the MoS2 FETs, reducing hysteresis and n-type doping. Measurements showed lower hysteresis and higher stability in the h-BN encapsulated devices compared to reference devices without h-BN.

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Description

Researchers created MoS2 field-effect transistors (FETs) with low hysteresis by encapsulating them in CVD-grown hexagonal boron nitride (h-BN) layers,...

Technical Information

  • File Format: PDF
  • File Size: 1.94 MB
  • Pages: 2
  • Language: EN
  • Author: Piacentini, Agata
  • Total Downloads: 366
  • Last Updated: 4 days ago

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