EUV Mask Defect Mitigation: Pattern Placement Strategy For Production.pdf

BACUS-Newsletter-October-2010.pdf
PDF
🔗 Source: spie.org
📊 Size: 199 KB
📄 Pages: 7 pages
⬇️ Downloads: 14

Summary

The key idea is to strategically place patterns or layouts on the mask blank such that defects do not impact the final wafer image. By leveraging non-critical areas within layout designs, it's possible to align these regions with known defect positions mapped from imperfect masks.

Key Points:

Challenge: Achieving zero defect levels in EUV mask blanks is a significant hurdle for high-volume production.
Solution: The proposed approach uses "defect avoidance," aligning non-critical layout areas with known defect locations on the blank.
* Results: Trials using real defect maps and various defect counts demonstrated successful alignment of non-critical areas with defects, showing promising results for defect avoidance as a function of mask blank defect count and lithography layer.

Significance: This work offers a potential solution to a critical issue hindering the widespread adoption of EUV lithography, highlighting the importance of innovative strategies for defect management in advanced manufacturing processes.

Description

EUV mask defect mitigation through pattern placement strategy, aiming to utilize defective masks by strategically positioning patterns to avoid defects, thus enhancing production efficiency.

Technical Information

  • File Format: PDF
  • File Size: 199 KB
  • Pages: 7
  • Language: EN
  • Total Downloads: 14
  • Last Updated: 5 days ago

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