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SiC MOSFET Solutions.pdf

driving sic mos with new packaging.pdf
Preview of SiC MOSFET Solutions
🔗 Source: fscdn.rohm.com
📊 Size: 506 KB
👤 Author: ROHM CO., LTD.
⬇️ Downloads: 253

Summary

Silicon carbide (SiC) MOSFETs offer advantages over silicon, including 10x breakdown electric field strength, 3x bandgap, and 3x thermal conductivity, making them suitable for high-temperature and high-voltage applications. However, they require a high current gate drive and present new circuit design challenges. ROHM provides solutions, including new packaging innovations with a separate driver source pin and a high current gate driver (BM6112) capable of driving up to 20A, allowing engineers to take full advantage of SiC MOSFETs' benefits.

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Description

Silicon carbide (SiC) MOSFETs offer advantages over silicon, including 10x breakdown electric field strength, 3x bandgap, and 3x thermal conductivity, making...

Technical Information

  • File Format: PDF
  • File Size: 506 KB
  • Pages: 6
  • Language: EN
  • Author: ROHM CO., LTD.
  • Total Downloads: 253
  • Last Updated: 2 hours ago

Document Overview

This PDF document about SiC MOSFET Solutions provides comprehensive information and guidance. Whether you're a beginner or advanced user, this resource offers valuable insights into SiC MOSFET Solutions.

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