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[2011] Fabrication Of Trench Nanostructures For Extreme Ultraviolet Lithography Masks By Atomic Force Microscope Lithography Mic.pdf

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Preview of [2011] Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography Mic
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Summary

Researchers developed a method to fabricate extreme ultraviolet lithography (EUVL) masks using atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. They created trench nanostructures using Ta and Cr/Ta bilayers, with Cr serving as both a hard mask and an absorber material. AFM lithography was used to pattern the Cr mask, which was then transferred to the underlying Ta layer using ICP dry-etching. This technique offers high resolution, low cost, and easy fabrication of critical patterns, making it suitable for producing EUVL masks and nanoscale metal structures.

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Researchers developed a method to fabricate extreme ultraviolet lithography (EUVL) masks using atomic force microscope (AFM) lithography and inductively...

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  • File Format: PDF
  • File Size: 707 KB
  • Pages: 6
  • Language: EN
  • Total Downloads: 136
  • Last Updated: 1 month ago

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