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EUV Lithography.pdf

BACUS-Newsletter-May-2021.pdf
Preview of EUV Lithography
🔗 Source: spie.org
📊 Size: 5.2 MB
📄 Pages: 13 pages
⬇️ Downloads: 98

Summary

ASML and Zeiss are developing a high-NA EUV lithography exposure tool with a 0.55 numerical aperture, targeting 8nm resolution to extend Moore's Law. The tool features a novel lens design, faster stages, and more accurate sensors for improved focus and overlay control. High-NA provides increased contrast, reducing stochastic contributions to edge placement error and printing defects. Developments in mask and resist technology are also crucial for improving line width roughness performance. The high-NA system is expected to enable further shrinkage in semiconductor manufacturing, with ASML and Zeiss providing updates on their progress.

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Description

ASML and Zeiss are developing a high-NA EUV lithography exposure tool with a 0.55 numerical aperture, targeting 8nm resolution to extend Moore's Law.

Technical Information

  • File Format: PDF
  • File Size: 5.2 MB
  • Pages: 13
  • Language: EN
  • Total Downloads: 98
  • Last Updated: 1 week ago

Document Overview

This PDF document about EUV Lithography provides comprehensive information and guidance. Whether you're a beginner or advanced user, this resource offers valuable insights into EUV Lithography.

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